发明名称 |
Semiconductor device with protective element |
摘要 |
A semiconductor device having a metal oxide semiconductor (MOS) transistor with a gate dielectric film, a gate electrode formed on the gate dielectric film, and source/drain regions formed in a semiconductor substrate. A protective element with a protected electrode overlays of the semiconductor substrate with an intervention of a dielectric film. At least one diffused region is adjacent to the protective electrode in the semiconductor substrate. The protect dielectric is connected to the electrode of the MOS transistor.
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申请公布号 |
US6600176(B2) |
申请公布日期 |
2003.07.29 |
申请号 |
US19990351134 |
申请日期 |
1999.07.12 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
NOGUCHI KO |
分类号 |
H01L29/78;H01L21/8234;H01L27/02;H01L27/088;(IPC1-7):H01L29/72 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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