发明名称 Wrought processing of brittle target alloy for sputtering applications
摘要 An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000° F. to 2500° F. for a preselected time. The ingot is then rolled in a temperature range of 1500° F. to 2500° F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500° F. to 2000° F., or between room temperature and 1500° F., and/or a final annealing between 500° F. and 1500° F., is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.
申请公布号 US6599377(B2) 申请公布日期 2003.07.29
申请号 US19990410014 申请日期 1999.10.01
申请人 HERAEUS, INC. 发明人 BARTHOLOMEUSZ MICHAEL;TSAI MICHAEL;DEODUTT ANAND
分类号 C22F1/10;C23C14/34;(IPC1-7):C22C19/07 主分类号 C22F1/10
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