| 摘要 |
PURPOSE: A method of forming a copper line in a semiconductor device is provided to prevent dishing caused at an upper part of a copper line when a copper layer is polished by CMP and a copper line is formed at a damascene pattern, thereby improving electrical properties of device. CONSTITUTION: A semiconductor substrate having a lower conductive layer(31) is prepared. An interlayer dielectric(32) is formed on the resultant structure. A functional pattern is formed by etching partially the interlayer dielectric. An active anode metal layer(33) is formed in the functional pattern. A damascene pattern is formed by etching partially the interlayer dielectric. The active anode metal layer is formed on a portion of the damascene pattern. A cupper layer is formed on the resultant structure. A cupper line(370) is formed by CMP.
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