发明名称 PIEZOELECTRIC BIMORPH MICRO PHONE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A piezoelectric bimorph micro phone and a method for manufacturing the same are provided to drastically improve the sensitivity when the electrodes are appropriately connected in serial, thereby preventing the changes of the stress due to the stress. CONSTITUTION: A piezoelectric bimorph micro phone includes the steps of: depositing(S1) a pair of SiN thin films on both sides of a substrate; depositing(S2) an aluminum layer on the front surface of the substrate; depositing(S3) a piezoelectric ZnO thin film on the aluminum layer; depositing(S4) a parylene-D thin film on the ZnO thin film; etching(S5) the SiN thin film formed on the rear surface of the substrate after the SiN thin film formed on the rear surface of the substrate is patterned; depositing(S6) a ZnO thin film on the exposed aluminum layer at the rear surface of the substrate; manufacturing(S7) the bimorph structure and the rear electrode; and manufacturing(S8) the front electrode.
申请公布号 KR20030062899(A) 申请公布日期 2003.07.28
申请号 KR20020003358 申请日期 2002.01.21
申请人 YI, SEUNG HWAN 发明人 YI, SEUNG HWAN
分类号 H04R17/02;(IPC1-7):H04R17/02 主分类号 H04R17/02
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