发明名称 VERTICAL CAVITY SURFACE EMITTING LASER DIODE AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A vertical cavity surface emitting laser diode and a fabricating method thereof are provided to obtain a stable operating characteristic by forming a first metal layer, a first contact layer, an active layer, a second contact layer, and a second metal layer vertically to an oscillating direction. CONSTITUTION: A vertical cavity surface emitting laser diode includes an active layer(15), a top mirror layer(17), and a bottom mirror layer(13). A first contact layer(14) is inserted between the bottom mirror layer(13) and the active layer(15). The active layer(15) is formed on one side of the first contact layer(14). A first metal layer(18) is formed on the other exposed side of the first contact layer. A second contact layer(16) is inserted between the active layer(15) and the top mirror layer(17). The top mirror layer is formed on one side of the second contact layer(16). A second metal layer(19) is formed on the other exposed side of the second contact layer(16).
申请公布号 KR100394095(B1) 申请公布日期 2003.07.25
申请号 KR19960028862 申请日期 1996.07.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAEK
分类号 H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/30
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