| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device in which an organic matter adhered to the surface of a substrate is removed effectively, and dielectric strength characteristics of a silicon oxide film have been improved. SOLUTION: This manufacturing method for a semiconductor device forms a polysilicon film on a silicon oxide film. A semiconductor substrate on which a silicon oxide film is formed is soaked into cleaning fluid which includes sulfuric acid and hydrogen peroxide, or into ozone added cleaning fluid of ultrapure water with ozone added, then a polysilicon film is formed on the silicon oxide film. COPYRIGHT: (C)2003,JPO
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