| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a rewiring layer-integral type semiconductor chip capable of preventing a maloperation by noise or the deterioration of communication characteristics. <P>SOLUTION: A rewiring layer comprising a metallic spatter layer 34 and a metallic plating layer 39 is formed on an insulating surface protecting layer 33 formed on the circuit formed surface of a complete wafer 31. The rewiring layer is formed around the periphery of an analog circuit formed on the circuit formed surface. The analog circuit may be formed by collecting all analog circuits to be formed in the semiconductor chip, for example, may be one of the particularily noise-susceptible analog circuits such as a power circuit, a calculating amplifier, a comparison amplifier, an RF receiving part, an RF transmitting part, an RF synthesizer, and a voltage build-up circuit or an amplifying circuit forming a part of a memory. After the rewiring layer is formed, the complete wafer 31 is scribed so that a desired semiconductor chip can be obtained. <P>COPYRIGHT: (C)2003,JPO |
