METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a structure having no variation in a process to form a semiconductor device using a laser beam. SOLUTION: In order to eliminate a variation in the characteristic of a thin film transistor which is assumed to be resulting from a pulse interval of a pulse oscillation type excimer laser, a pulse width is set to 1μs or more at the time of irradiating a silicon semiconductor with the pulse laser beam. Accordingly, the fused condition of the silicon film surface can be maintained for a longer period of time, and thereby a silicon film having a higher degree of crystal structure can be obtained. Such structure can be used for the crystallization of an amorphous silicon film and activation after ion injections of impurities or the like. COPYRIGHT: (C)2003,JPO