| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an output circuit capable of preventing electrostatic breakdown without damaging the original performance of a transistor. SOLUTION: This semiconductor device is provided with a semiconductor substrate 1, an element separating area 2 formed on the semiconductor substrate, a first impurity diffusion area 6 formed in a semiconductor substrate so that the element separating area can be surrounded, a second impurity diffusion area 7 formed in the semiconductor substrate, a first wiring electrode 8 and a second wiring electrode 12 electrically connected to the first impurity diffusion area at the both sides of the element separating area, an output terminal for outputting a signal to the outside, wiring for electrically connecting the first wiring electrode and the second wiring electrode to an output terminal, and a third wiring electrode 9 and fourth wiring electrodes 11 and 13 electrically connected to the second impurity diffusion area corresponding to the first and second wiring electrodes. COPYRIGHT: (C)2003,JPO
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