发明名称 |
HEAT TREATMENT METHOD AND APPARATUS FOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method for performing sufficiently uniform heat treatment to a silicon film on a glass substrate. SOLUTION: A heat diffusing plate 73 and a heating plate 74 are provided in this sequence within a heat treatment chamber 65. The heating plate 74 is provided to preliminarily heat the glass substrate W to temperatures ranging from 200°C to 400°C. The preheated glass substrate W is heat-treated with the radiation of the flash of a xenon flash lamp 69. With the radiation of flash, an amorphous silicon film on the glass substrate W is heated uniformly and thereby plycrystallized. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003209054(A) |
申请公布日期 |
2003.07.25 |
申请号 |
JP20020293665 |
申请日期 |
2002.10.07 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
KUSUDA TATSUFUMI |
分类号 |
H01L21/20;H01L21/26;H01L21/265;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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