发明名称 HEAT TREATMENT METHOD AND APPARATUS FOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment method for performing sufficiently uniform heat treatment to a silicon film on a glass substrate. SOLUTION: A heat diffusing plate 73 and a heating plate 74 are provided in this sequence within a heat treatment chamber 65. The heating plate 74 is provided to preliminarily heat the glass substrate W to temperatures ranging from 200°C to 400°C. The preheated glass substrate W is heat-treated with the radiation of the flash of a xenon flash lamp 69. With the radiation of flash, an amorphous silicon film on the glass substrate W is heated uniformly and thereby plycrystallized. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003209054(A) 申请公布日期 2003.07.25
申请号 JP20020293665 申请日期 2002.10.07
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KUSUDA TATSUFUMI
分类号 H01L21/20;H01L21/26;H01L21/265;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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