| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase light extraction efficiency by preventing deterioration of light extraction efficiency which is to be caused by influence of total refection on a boundary between the uppermost layer of a semiconductor multilayer film and transparent resin. <P>SOLUTION: In an LED, a double heterostructure wherein an InGaAlP active layer 13 is sandwiched between an n-type InAlP clad layer 12 and a p-type InAlP clad layer 14 is formed on an n-type GaAs substrate 10 of a face whose plane direction is (100), p-type GaAlAs current diffusion layers 15, 17 are formed on the double heterostructure, and a light is led out from a surface opposite to the substrate 10. A surface which is a (100) face of the current diffusion layer 17 on a light extraction surface side of the double heterostructure is worked, a (111) face is exposed, HCI treatment is performed to the exposed (111) face, and fine unevenness is formed. <P>COPYRIGHT: (C)2003,JPO |
