| 摘要 |
PROBLEM TO BE SOLVED: To suppress a decrease in a yield of an imaging apparatus by obtaining good characteristics in a semiconductor element. SOLUTION: A DG-TFT 10 comprises a gate electrode 12 and a gate electrode 22 opposed to each other, a semiconductor film 13 opposed to the electrode 12, channel protective films 14, 15 superposed on the film 13, an impurity semiconductor film 16 superposed on the channel protective film 14 and the semiconductor film 13, an impurity semiconductor film 18 superposed on the channel protective film 14, the channel protective film 15 and the semiconductor film 13, an impurity semiconductor film 17 superposed on the channel protective film 15 and the semiconductor film 13, a source electrode 19 superposed on the impurity semiconductor film 16 only on a part 16b superposed on the semiconductor film 13, a drain electrode 21 superposed on the impurity semiconductor film 18 only on a part 18c superposed on the semiconductor film 13, and a source electrode 20 superposed on the impurity semiconductor film 17 only on a part 17b superposed on the semiconductor film 13. COPYRIGHT: (C)2003,JPO
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