| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element which is suitable for minimizing the loss of a gate electrode and a hard mask by a relatively simple process in forming a self aligning contact. SOLUTION: The method comprises a step for preparing a semiconductor substrate 20 wherein a plurality of conductive patterns 21 are formed, a step for forming a first insulation film 23 along a surface profile of the substrate conductive pattern, a step for forming a second insulation film 24 on the first insulation film and at the same time forming a void 25 between the adjacent conductive patterns, a step for forming a third insulation film 26 on the second insulation film and a step for forming a contact hole 28 which exposes the surface of the substrate between the conductive patterns by selectively etching the first and second insulation films and the third insulation film covering the void. COPYRIGHT: (C)2003,JPO
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