| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon wafer which is capable of producing a high-density BMD by short-time heat treatment by suppressing the generation of a slip during device manufacturing processes. SOLUTION: A silicon monocrystal pulled by a CZ method is grown with an extended thermal donor generation temperature region passing time. The grown silicon monocrystal is cut into individual wafers, and the wafers are heat-treated at 600 to 800°C for 30 to 60 min. COPYRIGHT: (C)2003,JPO
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