| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device in which a recovery current change ratio dI/dt of a diode can be suppressed to a low value, only by processing to shorten a life time to the entirety of a cathode layer without necessity of aiming at a specific region of the cathode layer. SOLUTION: A thickness of the cathode layer 46 of a parasitic diode is set to 40μm or less, and a process for setting the life time of the layer 46 in the overall region to 10<SP>-6</SP>s or less is conducted. When the thickness of the layer 46 is set to 40μm or less, it is no longer necessary to locally conduct the process for shortening the life time, and the process for shortening the life time uniformly can be conducted for the entire cathode layer. The entirety can be applied to an element which is functioned as a transistor as a whole, in addition to a source region 54 and a gate electrode 60. COPYRIGHT: (C)2003,JPO
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