SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method obtaining a uniform and flat trench burying surface having extremely small irregularities even by using an ordinary dry etching unit. SOLUTION: A trench is formed in a main surface of a semiconductor substrate, and an insulation layer is formed on a side wall of the trench and the main surface of the semiconductor substrate. The semiconductor manufacturing method including a process for depositing a deposit so as to fill the inside of the trench formed with the insulation layer, and a process of exposing the insulation layer on the main surface of the semiconductor substrate by etching back an excess deposit formed on the insulation layer and an upper portion of the trench formed through the deposition process. A surface of the deposit deposited in the deposition process has only irregularities of 10 nm or less. COPYRIGHT: (C)2003,JPO