MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality semiconductor device in which the generation of an eave-shaped portion to be formed during anisotropic etching is suppressed and a coverage defect or step cut does not occur. SOLUTION: A semiconductor wafer having an off angle relative to a specific crystal plane is used. The method is provided with a process for forming a rectangular area on the semiconductor wafer, a process for containing an impurity element in a wafer material in that area and a process for forming a recessed portion in that area by anisotropic etching. COPYRIGHT: (C)2003,JPO