发明名称 PROCEDE DE FORMATION D'UN RESEAU REGULIER D'ILOTS SEMI-CONDUCTEURS SUR UN SUBSTRAT ISOLANT
摘要 A method of forming a network of islands (124) of semiconductor material on an electrically insulating material (112), comprising: p1 a) the deposition of nucleation kernels (122) on the surface of the electrically insulating material,b) the formation of islands of semiconductor material (124) respectively on the nucleation kernels.In accordance with the invention, the deposition of the nucleation kernels is effected using at least one so-called distribution layer (116) made of a material having a substantially regular molecular structure, formed on the surface of the electrically insulating material (112), in order to distribute the nucleation kernels in a substantially regular fashion on the surface of the electrically insulating material.
申请公布号 FR2772984(B1) 申请公布日期 2003.07.25
申请号 FR19970016158 申请日期 1997.12.19
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 MARTIN FRANCOIS;NUNZI JEAN MICHEL;MOUANDA BRIGITTE;PALACIN SERGE
分类号 H01L29/06;H01L21/20;H01L21/205;H01L29/66;H01L51/05;(IPC1-7):H01L21/20 主分类号 H01L29/06
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