| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a thin film capable of easily and inexpensively forming a polysilicon thin film having a large grain size silicon crystal by heating and melting an amorphous silicon thin film formed on a substrate, and to provide a thin film transistor used for the method. <P>SOLUTION: The method for forming a polysilicon thin film comprises the steps of forming a silica aerogel layer 52 having excellent heat insulation on a substrate 51, then directly emitting an excimer laser directly to the amorphous silicon thin film provided on the layer 52. The method further comprises the step of constituting TFTs 50a, 50b using the polysilicon thin film for the semiconductor layer. <P>COPYRIGHT: (C)2003,JPO |
