发明名称 METHOD OF MANUFACTURING SILICON CRYSTALLINE THIN FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To enable the formation of a high-quality crystalline silicon thin film on a substrate of a different kind at a low cost. <P>SOLUTION: An undercoat layer (2) is formed on a substrate (1) for formation of a thin film. A crystalline layer (3) is formed on a part or whole of the top thereof, and a fixing substrate (4) is bonded on top thereof. Then these are separated from the substrate (1) by removing the undercoat layer (2) to obtain a silicon crystalline thin film integrally formed with the fixing substrate (4). <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003209229(A) 申请公布日期 2003.07.25
申请号 JP20020008095 申请日期 2002.01.17
申请人 HITACHI CABLE LTD 发明人 OKA FUMITO;MURAMATSU SHINICHI;SASAKI TADASHI
分类号 H01L31/042;H01L21/02;H01L21/20;H01L21/336;H01L27/12;H01L29/786;H01L31/04;(IPC1-7):H01L27/12 主分类号 H01L31/042
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