发明名称 |
METHOD OF MANUFACTURING SILICON CRYSTALLINE THIN FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To enable the formation of a high-quality crystalline silicon thin film on a substrate of a different kind at a low cost. <P>SOLUTION: An undercoat layer (2) is formed on a substrate (1) for formation of a thin film. A crystalline layer (3) is formed on a part or whole of the top thereof, and a fixing substrate (4) is bonded on top thereof. Then these are separated from the substrate (1) by removing the undercoat layer (2) to obtain a silicon crystalline thin film integrally formed with the fixing substrate (4). <P>COPYRIGHT: (C)2003,JPO</p> |
申请公布号 |
JP2003209229(A) |
申请公布日期 |
2003.07.25 |
申请号 |
JP20020008095 |
申请日期 |
2002.01.17 |
申请人 |
HITACHI CABLE LTD |
发明人 |
OKA FUMITO;MURAMATSU SHINICHI;SASAKI TADASHI |
分类号 |
H01L31/042;H01L21/02;H01L21/20;H01L21/336;H01L27/12;H01L29/786;H01L31/04;(IPC1-7):H01L27/12 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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