MICROCRYSTALLINE SILICON LAYER, DEPOSITION THEREOF, PHOTOELECTRIC CONVERTER AND MANUFACTURE THEREOF

摘要

PURPOSE: To enhance the deposition rate of microcrystalline silicon having excellent crystallinity by adding a metal element for accelerating crystallization of silicon at a specified concentration to a microcrystalline silicon containing at least one element selected from hydrogen, fluorine and chlorine. CONSTITUTION: A capacitive coupled plasma CVD system is employed as a system for depositing a microcrystalline silicon. The CVD system comprises a reaction chamber 101, an evacuation means 102, a gas supply means 103, supply source 108 of metal element for accelerating crystallization of silicon, a glow discharge generation means 104 (high frequency power supply), and a substrate heating means 105 (heater power supply). The microcrystalline silicon principally comprises silicon and at least one element selected from hydrogen, fluorine and chlorine. Nickel is preferably employed as the metal element for accelerating crystallization of silicon and the concentration of nickel is preferably set at 5x10¬16cm¬-3-5x10¬19cm¬-3.