发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which, even when a moving direction of a carrier or an extending direction of wirings is deviated from an easily cleaved crystal axis direction, the device can be easily separated into chips. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of laminating an element forming layer made of a single crystal semiconductor on a supporting substrate made of the single crystal semiconductor via an insulation layer, so that the crystal axis direction of the element forming layer is deviated from the corresponding crystal axis direction of the substrate, and manufacturing a laminated substrate. The method further comprises the step of forming a semiconductor element in the element forming layer in a plurality of chips regions partitioned by a scribing line extended in a direction parallel to the crystal axial direction in which the substrate is easily cleaved. The method also comprises the steps of cleaving the substrate along the scribing line, and thereby separating the laminated substrate into a plurality of the chips. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003209259(A) 申请公布日期 2003.07.25
申请号 JP20020008742 申请日期 2002.01.17
申请人 FUJITSU LTD 发明人 SUGAYA SHINJI;SEKINO SATOSHI
分类号 H01L21/02;H01L21/301;H01L21/336;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/02
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