发明名称 |
Multigate semiconductor device with vertical channel current and method of fabrication |
摘要 |
The present invention is a multibit nonvolatile memory and its method of fabrication. According to the present invention a silicon channel body having a first and second channel surface is formed. A charge storage medium is formed adjacent to the first channel surface and a second charge storage medium is formed adjacent to the second channel surface. A first control gate is formed adjacent to the first charge storage medium adjacent to the first channel surface and a second control gate is formed adjacent to the second charge storage medium adjacent to the second surface. According to the second aspect of the present invention, a transistor is provided that has a source, a channel, a drain, and a plurality of gates where the channel current flows vertically between the source and drain. According to a third embodiment of the present invention, a memory element is formed using a transistor that has a read current that flows in a direction perpendicular to a substrate in or over which the transistors form. The transistor has a charge storage medium for storing its state. Multiple control gates address the transistor.
|
申请公布号 |
US2003139011(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020254878 |
申请日期 |
2002.09.26 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
CLEEVES JAMES M.;SUBRAMANIAN VIVEK |
分类号 |
G11C11/56;G11C16/04;H01L21/28;H01L21/3205;H01L21/336;H01L21/8246;H01L21/8247;H01L27/115;H01L29/76;H01L29/768;H01L29/788;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
G11C11/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|