| 摘要 |
A gate electrode 8A of a memory cell selection MISFET Qs, which forms part of a memory cell, and gate electrodes 8B and 8C of an n-channel type MISFET Qn and a p-channel type MISFET Qp, which forms part of a logic LSI, are formed by an SiGe layer 28 and a W layer 29 deposited above the layer 28. A silicon nitride film 9 is formed above the gate electrodes 8A, 8B, and 8C to realize self-aligned contact holes (SAC).
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