发明名称 |
C implants for improved SiGe bipolar yield |
摘要 |
A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region, the sub-collector region, the extrinsic base regions, and the collector-base junction region. In a preferred embodiment each of the aforesaid regions include C implants.
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申请公布号 |
US2003136975(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20030338476 |
申请日期 |
2003.01.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;SCHONENBERG KATHRYN T. |
分类号 |
H01L21/265;H01L21/331;H01L21/8222;H01L27/082;H01L29/10;H01L29/737;(IPC1-7):H01L31/032;H01L21/823;H01L31/072 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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