发明名称 Method for forming a metal layer on an IC package
摘要 The present invention is a method for forming a metal layer on an IC package which is applied to an IC package comprising a substrate and at least one chip on the substrate; the chip couples with the substrate via wire-bonding, flip-chip, etc.; further, an encapsulation covers at least on the chip and around the chip on the substrate; a metal-spraying layer is formed on partial non-conducting area of the IC package; a protective film can be optionally coated on the metal-spraying layer for protecting the metal-spraying layer; a thickness of the metal-spraying layer is decided depending on needs and easily changed to reach heat-dissipating and EMI shielding functions.
申请公布号 US2003138991(A1) 申请公布日期 2003.07.24
申请号 US20020151435 申请日期 2002.05.20
申请人 KUNG MORISS 发明人 KUNG MORISS
分类号 H01L23/31;H01L23/36;H01L23/552;(IPC1-7):H01L21/44;H01L21/48 主分类号 H01L23/31
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