| 摘要 |
Disclosed is an avalanche photodiode for use in super-high speed optical communication, more particularly, to a structure of an avalanche photodiode device capable of suppressing edge breakdown to increase avalanche gain factor of a light signal and to reduce a noise. The avalanche photodiode includes a wafer characterized in that the guard ring has a depth equal to that of a center part of the active region (diffused region), an edge of the active region is shallower than the center part, and the guard ring is electrically isolated from the active region. Therefore, a gain-bandwidth characteristic may be increased, and also the higher receiver sensitivity may be achieved.
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