Stacked capacitor for a semiconductor device and a method of fabricating the same

摘要

The disclosure describes a stacked capacitor and a method of forming the same. The method prevents a storage node of the stacked capacitor from crumbling due to lack of support, thereby improving the reliability of semiconductor devices that incorporate stacked capacitors. The disclosure also describes a stacked capacitor with a greater capacitance than a stacked capacitor in accordance with the conventional art.