| 摘要 |
A group III-V solar cell with GaAs as the main component, superior in radiation resistance, is provided. In a GaAs-based group III-V multijunction type solar cell, the group III-V solar cell is formed of an n type emitter layer and a p type base layer. The optical bandgap of the material forming the p type base layer becomes smaller as a function of approaching the pn junction. The group III-V solar cell has stacked a plurality of solar cells differing in optical bandgap. A group III-V solar cell formed of an n type emitter layer and a p type base layer with GaAs as the main component is stacked. The optical bandgap of the p type base layer becomes smaller as a function of approaching the pn junction.
|
