METHOD FOR EVALUATING IMPURITY CONCENTRATIONS IN SEMICONDUCTOR SUBSTRATES

摘要

A method for evaluating the concentration of impurities in a semiconductor substrate. The method includes drawing together at least a portion of the impurities and measuring the concentration of impurities that were drawn together. In one embodiment of the invention, a gettering layer is formed adjacent one or more surfaces of the substrate to getter impurities from the substrate to the gettering layer. The impurity concentration of the gettering layer is then measured and the results are used to determine at least a range of impurity concentrations that were in the substrate prior to the drawing together.