发明名称 A THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME
摘要 A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire are made of Ag alloy containing Ag and an additive including at least one selected from Zn, In, Sn and Cr.
申请公布号 AU2002367339(A1) 申请公布日期 2003.07.24
申请号 AU20020367339 申请日期 2002.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BEOM-SEOK CHO;CHANG-OH JEONG;JAE-GAB LEE;BONG-JOO KANG
分类号 G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L29/423;H01L29/45;H01L29/49;H01L29/786;H01L51/50;(IPC1-7):H01L29/786 主分类号 G02F1/1368
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