| 摘要 |
An isolating insulation film (1) and a P type active region (2) defined by the isolating insulation film (1) are formed on a semiconductor substrate. Then, an access transistor gate electrode (3), driver transistor gate electrodes (4a, 4b), and a dummy gate electrode (20) are formed. The dummy gate electrode (20) is formed to cover part of the active region (2) within a region (8) into which an N type dopant is to be implanted to form N+ source/drain regions (9). As a result, the N+ source/drain regions (9) are not formed under the dummy gate electrode (20), and the N+ source/drain regions (9) are reduced in width. This reduces the conductance of access transistors, that is, improves a conductance ratio between the driver and access transistors.
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