发明名称 |
Gate-enhanced junction varactor with gradual capacitance variation |
摘要 |
A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing zero-point threshold voltages for enabling the varactor capacitance to vary relatively gradually with a control voltage applied to the varactor. |
申请公布号 |
US2003137796(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020054653 |
申请日期 |
2002.01.18 |
申请人 |
BULUCEA CONSTANTIN |
发明人 |
BULUCEA CONSTANTIN |
分类号 |
H01L27/08;H03B5/12;(IPC1-7):H01G5/00;H01G7/00 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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