发明名称 |
Metal polishing slurry having a static etch inhibitor and method of formulation |
摘要 |
A metal polishing slurry having a static etch inhibitor and method for polishing a substrate while inhibiting static etching during the polishing of a substrate. The slurry composition includes an iodate-free halogenated inhibiting compound added to a generic slurry to form a resultant slurry. The substrate is polished using the resultant slurry, which inhibits the static etching of the substrate being polished. Also provided is a metal polishing slurry for inhibiting static etch comprising an oxidizer, a complexing agent, and an iodate-free halogenated inhibiting compound.
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申请公布号 |
US2003139047(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020056342 |
申请日期 |
2002.01.24 |
申请人 |
THOMAS TERENCE M.;DENARDI STEPHAN;GODFREY WADE |
发明人 |
THOMAS TERENCE M.;DENARDI STEPHAN;GODFREY WADE |
分类号 |
B24B37/00;C09G1/02;C09K3/14;C23F3/00;H01L21/304;H01L21/306;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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