| 摘要 |
A method for discharging a word line in a semiconductor memory device having a negative word line structure, and a word line discharge circuit for such a device, are described. The method includes the steps of discharging the word line to a first power supply through a first switch that is connected to the word line until the first switch reaches a threshold voltage, and simultaneously, discharging the word line to a second power supply through a second switch that is connected to the word line. The word line continues to discharge to the second power supply through the second switch after the first switch reaches the threshold voltage. When the first power supply is a ground reference and the second power supply is a negative voltage supply generated on the device, the level of the negative voltage can be stably maintained. Thus, the refresh characteristics of the semiconductor memory device are improved, and current consumption of the negative voltage generator can be reduced.
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