| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING CONTROLLED IMPURITY CONCENTRATION PROFILE, METHOD FOR MANUFACTURING THEREOF, AND SEMICONDUCTOR MANUFACTURING APPARATUS |
| 摘要 |
A tunnel gate insulating film is formed on a substrate. Next, a floating gate electrode containing no impurities in the vicinities of upper and lower end surfaces is formed on the tunnel gate insulating film. Then, the surface of the floating gate electrode is thermally oxidized to form a poly-gate oxide film.
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| 申请公布号 |
US2003137879(A1) |
申请公布日期 |
2003.07.24 |
| 申请号 |
US20020193062 |
申请日期 |
2002.07.12 |
| 申请人 |
HORIE YASUHIKO |
发明人 |
HORIE YASUHIKO |
| 分类号 |
H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C11/34;G11C16/04 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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