发明名称 Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device
摘要 The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.
申请公布号 US2003139045(A1) 申请公布日期 2003.07.24
申请号 US20030350185 申请日期 2003.01.24
申请人 NEC ELECTRONICS CORPORATION 发明人 AOKI HIDEMITSU;TOMIMORI HIROAKI
分类号 H01L21/304;C11D3/395;C11D7/10;C11D11/00;C23F1/18;C23F1/30;H01L21/02;H01L21/306;H01L21/321;H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/304
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