发明名称 |
Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device |
摘要 |
The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.
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申请公布号 |
US2003139045(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20030350185 |
申请日期 |
2003.01.24 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
AOKI HIDEMITSU;TOMIMORI HIROAKI |
分类号 |
H01L21/304;C11D3/395;C11D7/10;C11D11/00;C23F1/18;C23F1/30;H01L21/02;H01L21/306;H01L21/321;H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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