| 摘要 |
<p>Disclosed is a thin film transistor substrate having a capacitor structure capable of securing sufficient storage capacitance according to increase in data potential. The thin film transistor substrate includes a black matrix arranged between adjacent unit pixels on transparent insulating substrate, a first oxide film formed on the black matrix, a heavily doped polysilicon layer pattern formed on the first oxide film. The black matrix, the first oxide and the heavily doped polysilicon layer pattern form a capacitor. An active polysilicon layer pattern is formed on the first and second oxide films. A third oxide film is formed on an exposed surface of the active polysilicon layer pattern. A gate poly pattern is formed on the second oxide film including the first contact hole and on a selected region of the third oxide film, and is electrically connected with the underlying heavily doped polysilicon layer pattern.</p> |
