ASYMMETRIC SEMICONDUCTOR DEVICE HAVING DUAL WORK FUNCTION GATE AND METHOD OF FABRICATION,申请号AU20020361895-传众专利搜索

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发明名称	ASYMMETRIC SEMICONDUCTOR DEVICE HAVING DUAL WORK FUNCTION GATE AND METHOD OF FABRICATION
摘要
申请公布号	AU2002361895(A1)	申请公布日期	2003.07.24
申请号	AU20020361895	申请日期	2002.12.23
申请人	ADVANCED MICRO DEVICES, INC.	发明人	WITOLD, P. MASZARA;HAIHONG WANG;QI XIANG
分类号	H01L21/033;H01L21/8238;H01L21/84;H01L27/12;(IPC1-7):H01L21/823;H01L27/092	主分类号	H01L21/033
代理机构		代理人
主权项
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