| 摘要 |
An anti-reflection coating 5 used at time of forming a first contact hole 6 is interposed between a first insulating layer 4 and a second insulating layer 80, and the anti-reflection coating 5 is served as an etching prevention film for the first insulating layer 4 at time of forming a second contact hole 9 in the second insulating layer 80, whereby an electrical short between a conductive plug and an electrode layer is prevented; an electrical connection between upper and lower conductive plugs is stabilized; and a semiconductor device having a highly reliable contact structure, in which multi-layer conductive plugs are included, is obtainable.
|
