发明名称 |
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications |
摘要 |
A method of forming a thin, high-quality relaxed SiGe-on-insulator substrate material is provided which first includes forming a SiGe or pure Ge layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to the diffusion of Ge. Optionally forming a Si cap layer over the SiGe or pure Ge layer, and thereafter heating the various layers at a temperature which permits interdiffusion of Ge throughout the first single crystal Si layer, the optional Si cap and the SiGe or pure Ge layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Additional SiGe regrowth and/or formation of a strained epi-Si layer may follow the above steps. SiGe-on-insulator substrate materials as well as structures including at least the SiGe-on-insulator substrate materials are also disclosed herein.
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申请公布号 |
US2003139000(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020055138 |
申请日期 |
2002.01.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHU JACK O.;FOGEL KEITH E.;KOESTER STEVEN J.;SADANA DEVENDRA K.;OTT JOHN A |
分类号 |
H01L27/08;H01L21/02;H01L21/20;H01L21/225;H01L21/324;H01L21/337;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L21/337 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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