发明名称 |
Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment |
摘要 |
Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.
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申请公布号 |
US2003136772(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020279960 |
申请日期 |
2002.10.25 |
申请人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;HIROKI MASAAKI;TANAKA KOICHIRO;SHIGA AIKO;AKIBA MAI |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;HIROKI MASAAKI;TANAKA KOICHIRO;SHIGA AIKO;AKIBA MAI |
分类号 |
H01L21/20;B23K26/06;B23K26/08;G02F1/1368;G03F1/00;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L29/786;H01S3/00;H01S5/06;(IPC1-7):B23K26/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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