发明名称 |
DEVICE FOR CUTTING A SUBSTRATE LAYER, AND CORRESPONDING METHOD |
摘要 |
<p>The invention concerns a device for automatic high-precision cutting of a material layer (20a) which is integral with a source substrate (20b) via a weakened zone (200c), the source substrate and the layer to be cut forming together an assembly to be cut (20), the device comprising cutting means (101, 102) as well as means for retaining (100a, 100b) the assembly to be cut. The invention is characterized in that the retaining means are designed for controlled displacement so as to accompany actively the divergence and/or the deformation of each part of the assembly to be cut, and to rectify said divergence and/or said deformation. The invention also concerns a corresponding automatic cutting method.</p> |
申请公布号 |
WO03059591(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
WO2003FR00002 |
申请日期 |
2003.01.02 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;RAYSSAC, OLIVIER;LETERTRE, FABRICE |
发明人 |
RAYSSAC, OLIVIER;LETERTRE, FABRICE |
分类号 |
B28D1/22;B28D5/00;H01L21/20;H01L21/762;(IPC1-7):B28D5/00 |
主分类号 |
B28D1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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