| 摘要 |
A method to prevent electrical shorts between tungsten interconnects. First, a semiconductor substrate having an insulating layer thereon is provided. Then, the insulating layer is selectively etched to form a trench for interconnect. Then, a titanium nitride film is conformally deposited on the surface of the trench and the insulating layer. A tungsten layer is then deposited to fill the trench. Next, the tungsten layer above the titanium nitride film is removed by an ammonia hydrogen peroxide mixture (APM) solution. Next, the titanium nitride film above the insulating layer is removed by a sulfuric acid hydrogen peroxide mixture (SPM) solution to leave a tungsten interconnect within the trench.
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