发明名称 |
Semiconductor device and method of manufacture thereof |
摘要 |
A method is provided for manufacturing a semiconductor device having a multilayer wiring structure in which at least one insulating film is formed with a set of conducting portions which are electrically connected to each other to have a surface area of no less than 500 mum2 and which include a wiring having a width of no more than l.0 mum. The method includes a polishing step (501) for flattening the conducting portions together with the insulating film by chemical mechanical polishing, a chemical cleaning step (502) for cleaning the flattened surface of the insulating film with a cleaning liquid, and a rising step (503) for removing the cleaning liquid using a rinsing liquid. The rinsing step is performed using water with a dissolved oxygen concentration decreased to no more than 6 ppm by weight as the rinsing liquid.
|
申请公布号 |
US2003137052(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020326883 |
申请日期 |
2002.12.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
HORIUCHI HIROSHI;YAMAMOTO TAMOTSU;TAKIGAWA YUKIO;SUZUKI SHIGERU;SANTO NOBUAKI;MIYAJIMA MOTOSHU |
分类号 |
H01L21/02;H01L21/321;H01L21/768;H01L23/532;(IPC1-7):H01L21/476;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|