| 发明名称 |
Semiconductor device with deposited oxide |
| 摘要 |
A semiconductor device includes a semiconductor substrate having a first surface, a pair of active areas formed in the first surface, a deposited oxide layer proximate the active areas, and a gate over the first surface between the pair of active areas.
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| 申请公布号 |
US2003136999(A1) |
申请公布日期 |
2003.07.24 |
| 申请号 |
US20020052313 |
申请日期 |
2002.01.18 |
| 申请人 |
HODGES ROBERT L.;BRYANT FRANK R.;ROBINSON MURRAY |
发明人 |
HODGES ROBERT L.;BRYANT FRANK R.;ROBINSON MURRAY |
| 分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L29/76;H01L21/00;H01L21/84 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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