发明名称 Method of manufacturing mask and method of manufacturing semiconductor integrated circuit device
摘要 The manufacturing time of a mask is shortened. In a defect inspection of a mask having a light-shielding portion composed of a resist film, the presence or absence of defects, such as burr and film loss of a resist pattern on the mask, and foreign matters, etc. is inspected by reading optical information on either or both of reflection light and transmission light with respect to inspection light irradiated to the mask by the use of a foreign-matter inspection system. More specifically, in the inspection of the mask, it is possible to perform the defect inspection without performing a comparison inspection that requires a great amount of measuring time and advanced techniques. Therefore, the inspecting process of the mask can be simplified, and also the inspecting time of the mask can be shortened.
申请公布号 US2003139055(A1) 申请公布日期 2003.07.24
申请号 US20030349026 申请日期 2003.01.23
申请人 HASEGAWA NORIO;HAYANO KATSUYA;KUBO SHINJI;KOIZUMI YASUHIRO;TAKAYA HIRONOBU;HOGA MORIHISA 发明人 HASEGAWA NORIO;HAYANO KATSUYA;KUBO SHINJI;KOIZUMI YASUHIRO;TAKAYA HIRONOBU;HOGA MORIHISA
分类号 G03F1/08;G03F1/00;G03F1/10;G03F1/14;G03F1/50;G03F1/56;G03F1/62;G03F1/72;G03F1/84;G03F7/20;H01L21/027;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;H01L21/461 主分类号 G03F1/08
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