发明名称 Method and apparatus for monitoring plasma processing operations
摘要 The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.
申请公布号 US2003136663(A1) 申请公布日期 2003.07.24
申请号 US20020163624 申请日期 2002.06.06
申请人 SMITH MICHAEL LANE;STEVENSON JOEL O?APOS,DON;DENISE WARD PAMELA PEARDON 发明人 SMITH MICHAEL LANE;STEVENSON JOEL O?APOS,DON;DENISE WARD PAMELA PEARDON
分类号 G01J3/00;G01J3/28;G01J3/443;(IPC1-7):C23C14/00;C23C14/32;G01L21/30;G01R31/00 主分类号 G01J3/00
代理机构 代理人
主权项
地址