发明名称 High power semiconductor device having semiconductor chips
摘要 A plurality of semiconductor chips is each arranged over a first conductor. Each of semiconductor chips has a first main electrode, a second main electrode and a control electrode. A second conductor is electrically connected to the second main electrode and has columns each having an upper surface arranged over each of the semiconductor chips and equal to the number of the semiconductor chips. A circuit board has openings penetrated by the columns and equal to the number of the semiconductor chips and has a first insulating film, a third conductive film arranged on a back surface of the first insulating film and electrically connected to the second conductor, and a fourth conductive film arranged on a surface of the first insulating film and electrically connected to the control electrode.
申请公布号 US2003137037(A1) 申请公布日期 2003.07.24
申请号 US20030347927 申请日期 2003.01.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OMURA ICHIRO;DOMON TOMOKAZU;MIYAKE EITARO
分类号 H01L23/051;H01L23/48;(IPC1-7):H01L23/02 主分类号 H01L23/051
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