| 摘要 |
The present invention relates to an exposure controlling photomask used to form a three-dimensional face structure in a resist pattern and having a light interrupting film able to be continuously controlled in transmitted light amount from 100% to 0%, and a production method thereof. A light interrupting film 2 is deposited on a substrate 3, and a photosensitive material 6 is coated on this light interrupting film 2. Next, irradiation is performed by changing the irradiating amount of an electron beam every place of the photosensitive material 6 using an electron beam exposure technique. Next, development is performed and the photosensitive material is formed in the three-dimensional face structure. Next, in an etching process, the three-dimensional face structure is transferred to the light interrupting film 2 by etching-back the photosensitive material 6 and the light interrupting film 2 as a foundation.
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